CMP slurry (Chemical Mechanical Polishing slurry)

We can provide CMP slurry that meets your needs.

CMP Slurry
Slurry Tanks

Slurry Tanks

Features

Our company develops and manufactures CMP slurry. 
CMP stands for Chemical Mechanical Polishing, which involves the simultaneous chemical dissolution and mechanical removal and polishing. 
The specific chemical action depends on the chemical properties of the material to be polished.
 
For semiconductor copper wiring formation (CMP Slurry): 
Our CMP slurry for semiconductor copper wiring is  produced and has gained high reliability, receiving certification as a partner from major electronics manufacturers. 
We are also advancing the development of CMP slurry for cutting-edge devices.
 
For simultaneous polishing of dissimilar materials (CMP Slurry):
We are good at polishing dissimilar materials with high or low selectivity, rather than polishing a single material. 
For example, we have a proven track record in applications such as forming Ca&Ta damascene structures and exposing metal plugs embedded in resin. 
 
⇒ Please visit our "What is CMP Slurry?" page.

CMP slurry product lineup

[For wiring formation]CMP slurry for semiconductor (Cu CMP)

Polishing characteristics (Product name: TPC)

・ Oxidant H2O2 based
・ Achieves both Cu planarization and low dishing
・ xcellent over-polishing resistance
・ High selectivity (Cu/Ta > 600) (Cu / Ta =  ＞600)
・ High dispersion stability (over 1 year)
[Semiconductor Cu device polishing process Step 1] 
Cu is polished with Cu CMP slurry.

Cu is polished with Cu CMP slurry.

Polishing is stopped on Ta.

Polishing is stopped on Ta.

[For wiring formation]CMP slurry for semiconductor (Ta CMP)

Polishing characteristics (Product name: MKT)

・ Oxidant H2O2 based
・ Cu removal rate adjustable
・ High dispersion stability (over 1 year)

[Semiconductor Cu device polishing process Step 2] 
Ta and Cu are polished with Ta CMP slurry.

Ta and Cu are polished with Ta CMP slurry.

Ta is polished, exposing the insulating film and Cu.

Ta is polished, exposing the insulating film and Cu.

[For wiring formation]CMP slurry for semiconductor (W CMP)

Polishing characteristics (Product name: MKW)

・ High selectivity slurry
・ Achieves polishing characteristics equivalent to other companies' products
・ Coarse particle removal (scratch care compatible)
W is polished with W CMP slurry.

W is polished with W CMP slurry.

[For TSV]CMP slurry for semiconductor (Thick film Cu CMP)

Polishing characteristics (Product name: SE-High)

・ Oxidant H2O2 based
・ Cu high-speed removal on the order of microns
・ High dispersion stability (over 1 year)

Cu is polished with thick film Cu CMP slurry.

Cu is polished with thick film Cu CMP slurry.

[For TSV]CMP slurry for semiconductor (Si CMP)

Polishing characteristics (Product name: Si-07)

・ Oxidant H2O2 based
・ Cu removal rate adjustable
・ Si high-speed removal on the order of microns
Si, insulation film, and Ti are polished with Si CMP slurry.

Si, insulation film, and Ti are polished with Si CMP slurry.

[For Resin Polishing]CMP slurry for package (PI Polishing CMP)

Polishing characteristics (Product name: PI-01)

・ Polyimide high-speed removal on the order of microns
・ Achieves low surface roughness after polishing
・ Simultaneous polishing with copper wiring possible

PI is polished with PI polishing CMP slurry.

PI is polished with PI polishing CMP slurry.

[For resin polishing]CMP slurry for packaging (Filler-filled resin-film CMP)

Polishing characteristics (Product name: CME-01)

・ High-speed removal of filler-containing resin film
・ Simultaneous polishing with copper wiring possible
※Dilution possible as needed. 

Filler-filled resin-film is polished with the CMP slurry.

Filler-filled resin-film is polished with the CMP slurry.

[Others]CMP slurry for semiconductor (Oxide film CMP)

Polishing characteristics (Product name: CMS)

・ Excellent removal rate for oxide films
・ Concentrated type available (10 times concentration)
・ Good redispersion
・ Achieves good surface roughness and cleanliness after polishing

Insulating film is polished with oxide film CMP slurry.

Insulating film is polished with oxide film CMP slurry.

[Others]Slurry for HDD (Magnetic Head Polishing)

Polishing characteristics (Product name: DS-01)

・ Oil-based diamond slurry
・ Good redispersion, achieves high-speed polishing with low scratching
・ Reduction of adherends to the polished object after polishing
・ Oil-based + anti-oxidation agent achieves high corrosion prevention effect

After dispersing to primary particles, flocculant is added to achieve high-speed polishing and high surface quality.

After dispersing to primary particles, flocculant is added to achieve high-speed polishing and high surface quality.

▼For inquiries about CMP slurry, please contact us below▼ 

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